The SI1405BDH-T1-GE3 is a TrenchFET MOSFET from Vishay with a maximum drain to source voltage of 8V and a continuous drain current of 1.6A. It features a maximum power dissipation of 2.27W and a maximum operating temperature of 150°C. The device is surface mount and available in tape and reel packaging. It is RoHS compliant and not radiation hardened.
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Vishay SI1405BDH-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 305pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.27W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 112mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1405BDH-T1-GE3 to view detailed technical specifications.
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