P-channel MOSFET, 8V Vds, 1.6A continuous drain current. Features low Rds(on) of 125mΩ max, 210mΩ typical. Operates from -55°C to 150°C, with 568mW power dissipation. Packaged in TSOP for surface mounting, supplied on tape and reel.
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Vishay SI1405DL-T1-E3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 125mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.094inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 568mW |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Width | 0.053inch |
| RoHS | Compliant |
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