The SI1405DL-T1-GE3 is a TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1.6A and a drain to source voltage of 8V. The device is RoHS compliant and features a maximum power dissipation of 568mW. It is packaged in a tape and reel format for surface mount applications.
MountingSurface Mount
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Technical Specifications
Vishay SI1405DL-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1405DL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1405DL-T1-GE3 to view detailed technical specifications.
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