Single N-Channel Power MOSFET featuring 30V drain-source voltage (Vdss) and a low 46mΩ maximum drain-source on-resistance (Rds On). This surface-mount component offers a continuous drain current (ID) of 4A and a maximum power dissipation of 2.8W. Designed for efficient switching, it exhibits a 6ns turn-on delay and a 10ns fall time. The SOT-363 package houses a single transistor with a gate-source voltage (Vgs) rating of 8V and an input capacitance of 560pF, operating across a temperature range of -55°C to 150°C.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1414DH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 46mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.000988oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1414DH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1414DH-T1-GE3 to view detailed technical specifications.
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