N-channel MOSFET, 12V Vdss, 4A continuous drain current, and 26mΩ max drain-source on-resistance. Features a SOT-363-6 package for surface mounting, with 10ns turn-on and fall times. Operating temperature range from -55°C to 150°C, with 2.8W max power dissipation. RoHS compliant and supplied in tape and reel packaging.
PackageSOT-363-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1422DH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 26mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 725pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 400mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000265oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1422DH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1422DH-T1-GE3 to view detailed technical specifications.
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