The SI1499DH-T1-GE3 is a P-channel TrenchFET MOSFET with a continuous drain current of 1.6A and a drain to source voltage of 8V. It features a drain to source resistance of 78mR and an input capacitance of 650pF. The device is packaged in a SOT-363-6 surface mount package and is rated for operation between -55°C and 150°C. It is compliant with RoHS regulations and is available in tape and reel packaging.
PackageSOT-363-6
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1499DH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 650pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.78W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.000265oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1499DH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1499DH-T1-GE3 to view detailed technical specifications.
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