Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 30V drain-to-source voltage and 700mA continuous drain current. Offers a low on-resistance of 388mΩ (typical) and 740mΩ (maximum). Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-363 (SC-70) surface-mount package, supplied on tape and reel. RoHS compliant and halogen-free.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI1539CDL-T1-GE3 technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
700mA
Drain to Source Resistance
740mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
28pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
340mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
388mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
4ns
Turn-On Delay Time
32ns
Weight
0.000988oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI1539CDL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1539CDL-T1-GE3 to view detailed technical specifications.
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