Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 30V drain-to-source voltage and 700mA continuous drain current. Offers a low on-resistance of 388mΩ (typical) and 740mΩ (maximum). Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-363 (SC-70) surface-mount package, supplied on tape and reel. RoHS compliant and halogen-free.
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Vishay SI1539CDL-T1-GE3 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Resistance | 740mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 28pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 340mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 388mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 4ns |
| Turn-On Delay Time | 32ns |
| Weight | 0.000988oz |
| RoHS | Compliant |
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