Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 500mA. Offers a low drain-source on-resistance of 390mΩ (max) and a gate-source voltage rating of 12V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 340mW. Packaged in a 6-pin SC-70 surface-mount format, this component is halogen-free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI1553CDL-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
500mA
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
850mR
Fall Time
8ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Input Capacitance
38pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
340mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
390mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
12ns
Turn-On Delay Time
15ns
Weight
0.000988oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI1553CDL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1553CDL-T1-GE3 to view detailed technical specifications.
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