The SI1555DL-T1-GE3 is a P-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 700mA and a drain to source breakdown voltage of -8V. The device is packaged in a SOT-363-6 case and is RoHS compliant. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageSOT-363-6
PolarityP-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1555DL-T1-GE3 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 510mR |
| Drain to Source Voltage (Vdss) | -8V |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 270mW |
| RoHS Compliant | Yes |
| Series | SI1555DL |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1555DL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1555DL-T1-GE3 to view detailed technical specifications.
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