
Surface mount N-channel JFET with 30V drain-source voltage and 590mA continuous drain current. Features 2 channels, 480mΩ maximum drain-source on-resistance, and 5ns turn-on delay. Operates from -55°C to 150°C with 270mW power dissipation. Packaged in SOT-363-6 (SC-70) for tape and reel delivery.
Vishay SI1900DL-T1-E3 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 590mA |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 480mR |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 270mW |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000265oz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1900DL-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
