Surface mount N-channel JFET with 30V drain-source voltage and 590mA continuous drain current. Features 2 channels, 480mΩ maximum drain-source on-resistance, and 5ns turn-on delay. Operates from -55°C to 150°C with 270mW power dissipation. Packaged in SOT-363-6 (SC-70) for tape and reel delivery.
PackageSOT-363-6
MountingSurface Mount
PolarityN-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1900DL-T1-E3 technical specifications.
General
Package/Case
SOT-363-6
Continuous Drain Current (ID)
590mA
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
480mR
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
270mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
270mW
Rds On Max
480mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
8ns
Turn-On Delay Time
5ns
Weight
0.000265oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1900DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1900DL-T1-E3 to view detailed technical specifications.
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