N-Channel JFET transistor for general-purpose small signal applications. Features 20V Drain-to-Source Voltage (Vdss) and 1.1A Continuous Drain Current (ID). Offers low 235mR Drain-to-Source On Resistance (Rds On Max) and 62pF Input Capacitance. Operates from -55°C to 150°C with 420mW Max Power Dissipation. Packaged in SC for surface mounting, supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power300mW
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Technical Specifications
Vishay SI1902CDL-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.1A
Drain to Source Resistance
235mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
235mR
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
62pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
420mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
235mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
11ns
Turn-On Delay Time
4ns
Weight
0.000988oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI1902CDL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1902CDL-T1-GE3 to view detailed technical specifications.
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