N-Channel JFET transistor for general-purpose small signal applications. Features 20V Drain-to-Source Voltage (Vdss) and 1.1A Continuous Drain Current (ID). Offers low 235mR Drain-to-Source On Resistance (Rds On Max) and 62pF Input Capacitance. Operates from -55°C to 150°C with 420mW Max Power Dissipation. Packaged in SC for surface mounting, supplied on tape and reel.
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Vishay SI1902CDL-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Resistance | 235mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 235mR |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 62pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 235mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.000988oz |
| RoHS | Compliant |
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