P-Channel MOSFET, 20V Drain-Source Voltage, 880mA Continuous Drain Current. Features 490mΩ Max Drain-Source On-Resistance at 10V Vgs. Operates with a 12V Gate-Source Voltage, exhibiting 150ns Turn-On Delay and 0.85µs Fall Time. Packaged in a compact SOT-363-6 (SC70-6) surface-mount case. RoHS compliant with a maximum power dissipation of 740mW.
PackageSOT-363-6
MountingSurface Mount
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Vishay SI1913EDH-T1-E3 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 880mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 490mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 490mR |
| Fall Time | 0.85us |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 570mW |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 490mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 0.84us |
| Turn-On Delay Time | 150ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1913EDH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1913EDH-T1-E3 to view detailed technical specifications.
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