Dual N-channel MOSFET, 20V Vds, 1.3A continuous drain current, and 198mΩ Rds(on). Features a 400mV threshold voltage, 43ns turn-on delay, and 220ns fall time. Packaged in a SOT-363-6 surface-mount case, this component offers a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI1922EDH-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI1922EDH-T1-GE3 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Resistance | 198mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 220ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 198mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 480ns |
| Turn-On Delay Time | 43ns |
| Weight | 0.000265oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1922EDH-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
