Dual N-channel MOSFET featuring 60V drain-source voltage and 370mA continuous drain current. Surface mountable in a SOT-363 package, this component offers a maximum on-resistance of 1.4 Ohms. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 510mW. Key switching characteristics include a 6.5ns turn-on delay and 12ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI1926DL-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI1926DL-T1-E3 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 1.4R |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 18.5pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 6.5ns |
| Weight | 0.000988oz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1926DL-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
