
Dual N-channel MOSFET featuring 60V drain-source voltage and 370mA continuous drain current. Surface mountable in a SOT-363 package, this component offers a maximum on-resistance of 1.4 Ohms. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 510mW. Key switching characteristics include a 6.5ns turn-on delay and 12ns fall time.
Vishay SI1926DL-T1-E3 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 1.4R |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 18.5pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 6.5ns |
| Weight | 0.000988oz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1926DL-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
