Dual P-channel MOSFET, 12V Vdss, 1.14A continuous drain current, and 390mR max Rds(on). Features include 12ns turn-on delay, 15ns turn-off delay, and 27ns fall time. This surface-mount component operates from -55°C to 150°C with 1.25W max power dissipation. Packaged in SC70-6, it is lead-free and RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1965DH-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.14A |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 390MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000988oz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1965DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1965DH-T1-E3 to view detailed technical specifications.
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