P-Channel MOSFET, 12V Vds, 1.14A continuous drain current, and 390mΩ maximum drain-source on-resistance. Features a 1.25W maximum power dissipation and operates within a -55°C to 150°C temperature range. Surface mountable in a SOT-363 package, this component offers fast switching with turn-on delay of 12ns and fall time of 10ns.
PackageSOT-363
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1965DH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 1.14A |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 390mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | -400mV |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 390mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000988oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1965DH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1965DH-T1-GE3 to view detailed technical specifications.
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