P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 2.2A and a drain-to-source voltage of -20V. Offers a low drain-source on-resistance of 100mR. Operates within a temperature range of -55°C to 150°C and is housed in a SOT-23-3 surface-mount package. This component is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2301BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
100MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
375pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
-950mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-950mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2301BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2301BDS-T1-GE3 to view detailed technical specifications.
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