P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 2.2A and a drain-to-source voltage of -20V. Offers a low drain-source on-resistance of 100mR. Operates within a temperature range of -55°C to 150°C and is housed in a SOT-23-3 surface-mount package. This component is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2301BDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 100MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 375pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | -950mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -950mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2301BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2301BDS-T1-GE3 to view detailed technical specifications.
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