P-channel MOSFET, TO-236 package, designed for general-purpose small signal applications. Features a continuous drain current of 2.3A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 112mR at a gate-source voltage of -4.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. This surface-mount component is supplied in tape and reel packaging and is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power860mW
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Technical Specifications
Vishay SI2301CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
2.3A
Drain to Source Resistance
112mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
112mR
Fall Time
35ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
405pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
-400mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
860mW
Radiation Hardening
No
Rds On Max
112mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2301CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2301CDS-T1-GE3 to view detailed technical specifications.
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