N-Channel Silicon Metal-Oxide Semiconductor FET with 20V Drain to Source Voltage (Vdss) and 2.1A Continuous Drain Current (ID). Features 60mR Drain to Source Resistance (Rds On Max) and 950mV Threshold Voltage. This surface mount transistor, packaged in SOT-23-3, offers fast switching with 7ns turn-on and 16ns turn-off delay times. Operates from -55°C to 150°C with a maximum power dissipation of 700mW.
Checking distributor stock and pricing after the page loads.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 950mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 60mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
