N-channel MOSFET, ideal for general-purpose small signal applications. Features a 20V drain-source voltage and 2.6A continuous drain current. Offers a low 57mΩ drain-source on-resistance and fast switching times with 8ns turn-on and 7ns fall times. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
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Vishay SI2302CDS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 57mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 710mW |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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