P-channel MOSFET, designed for general-purpose small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 1.3A. Offers a low on-resistance of 200mΩ at a nominal gate-to-source voltage of -3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 700mW. Packaged in a SOT-23-3 surface-mount configuration, this component is halogen-free and RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power700mW
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Technical Specifications
Vishay SI2303BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
180pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
-3V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
55ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI2303BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2303BDS-T1-GE3 to view detailed technical specifications.
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