P-channel MOSFET, designed for general-purpose small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 1.3A. Offers a low on-resistance of 200mΩ at a nominal gate-to-source voltage of -3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 700mW. Packaged in a SOT-23-3 surface-mount configuration, this component is halogen-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI2303BDS-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 180pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 55ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI2303BDS-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
