N-channel MOSFET, TO-236AA package, offering 30V drain-source voltage and 2.6A continuous drain current. Features low 70mΩ drain-source on-resistance, 3V threshold voltage, and fast switching times with 7.5ns turn-on and 19ns turn-off delay. Operates from -55°C to 150°C with 750mW power dissipation, suitable for general-purpose small-signal applications. Surface mount design, RoHS compliant, and halogen-free.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2304BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
70mR
Fall Time
12.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
225pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.5ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2304BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2304BDS-T1-GE3 to view detailed technical specifications.
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