N-channel enhancement mode power MOSFET featuring TrenchFET technology. This single-element transistor offers a maximum drain-source voltage of 30V and a continuous drain current of 3.3A. It is housed in a 3-pin SOT-23 (TO-236AB) surface-mount package with gull-wing leads, measuring 3.04mm x 1.4mm x 1.02mm. Key electrical characteristics include a maximum gate threshold voltage of 2.2V and a low drain-source on-resistance of 60mΩ at 10V.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.04(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1.02(Max) |
| Seated Plane Height (mm) | 1.12(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Package Orientation | Yes |
| Package Orientation Marking Type | Beveled Edge |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.3A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 60@10VmOhm |
| Typical Gate Charge @ Vgs | 4.5@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 4.5nC |
| Typical Input Capacitance @ Vds | 235@15VpF |
| Maximum Power Dissipation | 1100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 45pF |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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