N-channel MOSFET, designed for general-purpose small signal applications. Features a 30V drain-source voltage and 3.6A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance and 235pF input capacitance. Packaged in a SOT-23-3 surface-mount case, this component is RoHS compliant and operates from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI2304DDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
49mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
60mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
235pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Nominal Vgs
2.2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.1W
Rds On Max
60mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.2V
Turn-On Delay Time
12ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2304DDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2304DDS-T1-GE3 to view detailed technical specifications.
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