P-channel MOSFET, ideal for general-purpose small signal applications. Features a continuous drain current of 4.1A and a drain-to-source breakdown voltage of 8V. Offers a low drain-source on-resistance of 40mΩ. Operates within a temperature range of -50°C to 150°C, with a maximum power dissipation of 960mW. Surface-mount SOT-23-3 package, supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
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Technical Specifications
Vishay SI2305ADS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.1A
Drain to Source Breakdown Voltage
8V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
-8V
Drain-source On Resistance-Max
40MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
740pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
-800mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-800mV
Turn-Off Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI2305ADS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2305ADS-T1-GE3 to view detailed technical specifications.
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