P-channel MOSFET, ideal for general-purpose small signal applications. Features a continuous drain current of 4.1A and a drain-to-source breakdown voltage of 8V. Offers a low drain-source on-resistance of 40mΩ. Operates within a temperature range of -50°C to 150°C, with a maximum power dissipation of 960mW. Surface-mount SOT-23-3 package, supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
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Technical Specifications
Vishay SI2305ADS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2305ADS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2305ADS-T1-GE3 to view detailed technical specifications.
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