P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 4.4A and a drain-source voltage of -8V. Offers a low drain-source on-resistance of 35mR (max) and a threshold voltage of -1V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.7W. Packaged in a compact SOT-23-3 surface-mount case, this component is RoHS compliant.
PackageSOT-23-3
Voltage8V
Current58A
MountingSurface Mount
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Technical Specifications
Vishay SI2305CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.4A
Current
58A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
-8V
Drain-source On Resistance-Max
35mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
960pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
Voltage
8V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2305CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2305CDS-T1-GE3 to view detailed technical specifications.
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