P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 4.4A and a drain-source voltage of -8V. Offers a low drain-source on-resistance of 35mR (max) and a threshold voltage of -1V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.7W. Packaged in a compact SOT-23-3 surface-mount case, this component is RoHS compliant.
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Vishay SI2305CDS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.4A |
| Current | 58A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| Voltage | 8V |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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