P-channel power MOSFET for general-purpose applications. Features a low drain-source on-resistance of 52mΩ at a gate-source voltage of -800mV. Supports a continuous drain current of 3.5A and a drain-source breakdown voltage of 8V. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component offers fast switching speeds with turn-on delay of 13ns and fall time of 25ns. Maximum power dissipation is 1.25W, operating across a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI2305DS-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 52mR |
| Dual Supply Voltage | -8V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.245nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Width | 0.055inch |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI2305DS-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
