P-channel power MOSFET with 8V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Features low 52mR drain-to-source resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 13ns and fall time of 25ns.
PackageSOT-23-3
Voltage8V
Current58A
MountingSurface Mount
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Technical Specifications
Vishay SI2305DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current | 58A |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.245nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Voltage | 8V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2305DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2305DS-T1-GE3 to view detailed technical specifications.
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