P-channel MOSFET, TO-236 package, offering 2.5A continuous drain current and -30V drain-source breakdown voltage. Features low 78mΩ drain-source on-resistance and fast switching times with 9ns turn-on and 12ns fall times. Operates from -55°C to 150°C with 750mW power dissipation. Surface mountable, RoHS compliant, and ideal for general-purpose small signal applications.
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Vishay SI2307BDS-T1-E3 technical specifications.
| Package/Case | TO-236 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 78mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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