P-channel MOSFET, TO-236 package, offering 2.5A continuous drain current and -30V drain-source breakdown voltage. Features low 78mΩ drain-source on-resistance and fast switching times with 9ns turn-on and 12ns fall times. Operates from -55°C to 150°C with 750mW power dissipation. Surface mountable, RoHS compliant, and ideal for general-purpose small signal applications.
PackageTO-236
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2307BDS-T1-E3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
78mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
78mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
380pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
78mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
25ns
Turn-On Delay Time
9ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2307BDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2307BDS-T1-E3 to view detailed technical specifications.
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