P-channel MOSFET, ideal for general-purpose small signal applications. Features a continuous drain current of 2.5A and a drain-to-source voltage of -30V. Offers a low Rds(on) of 78mR, ensuring efficient operation. Packaged in a compact SOT-23-3 surface-mount case, it operates across a wide temperature range of -55°C to 150°C. This component is RoHS compliant and supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI2307BDS-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI2307BDS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | -30V |
| Dual Supply Voltage | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 380pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI2307BDS-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
