P-channel MOSFET, ideal for general-purpose small signal applications. Features a continuous drain current of 2.5A and a drain-to-source voltage of -30V. Offers a low Rds(on) of 78mR, ensuring efficient operation. Packaged in a compact SOT-23-3 surface-mount case, it operates across a wide temperature range of -55°C to 150°C. This component is RoHS compliant and supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2307BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.5A
Drain to Source Resistance
78mR
Drain to Source Voltage (Vdss)
-30V
Dual Supply Voltage
30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
380pF
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
78mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Turn-Off Delay Time
25ns
Turn-On Delay Time
9ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2307BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2307BDS-T1-GE3 to view detailed technical specifications.
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