P-channel MOSFET, TO-236AB package, offering a continuous drain current of 2.7A and a drain-source voltage of -30V. Features a low drain-source on-resistance of 88mR, input capacitance of 340pF, and operates within a temperature range of -55°C to 150°C. This surface-mount device boasts a maximum power dissipation of 1.1W and is halogen-free and RoHS compliant. Ideal for general-purpose small signal applications.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI2307CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
880mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
88MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
88mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
20ns
Turn-On Delay Time
40ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2307CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2307CDS-T1-GE3 to view detailed technical specifications.
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