P-channel MOSFET, TO-236AB package, offering a continuous drain current of 2.7A and a drain-source voltage of -30V. Features a low drain-source on-resistance of 88mR, input capacitance of 340pF, and operates within a temperature range of -55°C to 150°C. This surface-mount device boasts a maximum power dissipation of 1.1W and is halogen-free and RoHS compliant. Ideal for general-purpose small signal applications.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Vishay SI2307CDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 880mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 88MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 88mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2307CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2307CDS-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
