N-Channel MOSFET, SOT-23-3 package, offering a continuous drain current of 2A and a maximum drain-source voltage of 60V. Features low drain-source on-resistance (Rds On) of 160mR. Operates with a gate-source voltage up to 20V and a threshold voltage of 3V. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 10ns. Maximum power dissipation is 1.25W, with operating temperatures from -55°C to 150°C. Surface mount component, RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2308DS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
160mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
240pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
17ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2308DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2308DS-T1-E3 to view detailed technical specifications.
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