P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 60V drain-source breakdown voltage and a maximum continuous drain current of 1.25A. Offers a low drain-source on-resistance of 340mΩ. Operates within a temperature range of -55°C to 150°C and is packaged in a surface-mount SOT-23-3 (TO-236) package, supplied on tape and reel.
PackageSOT-23-3
Voltage60V
Current12A
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SI2309DS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.25A
Current
12A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
340mR
Fall Time
11.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
340mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15.5ns
Turn-On Delay Time
10.5ns
Voltage
60V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2309DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2309DS-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
