The SI2309DS-T1-GE3 is a P-channel JFET from Vishay, packaged in a SOT-23-3 small outline package. It can handle a continuous drain current of 1.25A and a maximum drain to source voltage of -60V. The device has a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. The SI2309DS-T1-GE3 is RoHS compliant and available in tape and reel packaging.
PackageSOT-23-3
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2309DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.25A |
| Drain to Source Resistance | 340mR |
| Drain to Source Voltage (Vdss) | -60V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2309DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2309DS-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.
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