N-channel MOSFET, surface mount, SOT-23-3 package. Features 3.9A continuous drain current and 20V drain-to-source breakdown voltage. Offers low 31mΩ drain-to-source on-resistance. Operates from -55°C to 150°C with 750mW maximum power dissipation. Includes fast switching times with 9ns turn-on and 10ns fall times.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power750mW
Quick Jump:
Technical Specifications
Vishay SI2312BDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.9A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
31mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
31mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
850mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
31mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
850mV
Turn-Off Delay Time
35ns
Turn-On Delay Time
9ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2312BDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2312BDS-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
