N-channel MOSFET, a general-purpose small signal transistor, features a 20V drain-source voltage and 6A continuous drain current. It offers a low drain-source on-resistance of 26.5mR, with a maximum of 31.8mR. Operating across a temperature range of -55°C to 150°C, this surface-mount component in a SOT-23-3 package boasts fast switching speeds with an 8ns turn-on delay and 8ns fall time. It is RoHS compliant and designed for efficient power dissipation up to 2.1W.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2312CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
6A
Drain to Source Resistance
26.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
31.8MR
Fall Time
8ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
865pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
31.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
450mV
Turn-Off Delay Time
31ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2312CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2312CDS-T1-GE3 to view detailed technical specifications.
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