N-channel MOSFET, a general-purpose small signal transistor, features a 20V drain-source voltage and 6A continuous drain current. It offers a low drain-source on-resistance of 26.5mR, with a maximum of 31.8mR. Operating across a temperature range of -55°C to 150°C, this surface-mount component in a SOT-23-3 package boasts fast switching speeds with an 8ns turn-on delay and 8ns fall time. It is RoHS compliant and designed for efficient power dissipation up to 2.1W.
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Vishay SI2312CDS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 26.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 31.8MR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 865pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 450mV |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| RoHS | Compliant |
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