N-channel MOSFET, surface mount, SOT-23-3 package. Features 20V drain-source voltage (Vdss) and 4.9A continuous drain current (ID). Offers low 33mR drain-source on-resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 750mW. Includes a threshold voltage of 950mV and a gate-to-source voltage (Vgs) of 12V.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2314EDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.9A
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
33mR
Fall Time
1400ns
Gate to Source Voltage (Vgs)
12V
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
950mV
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
950mV
Turn-Off Delay Time
13500ns
Turn-On Delay Time
530ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2314EDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2314EDS-T1-E3 to view detailed technical specifications.
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