P-channel, small-signal MOSFET for general-purpose applications. Features a 12V drain-source breakdown voltage and a continuous drain current of 3A. Offers a low drain-source on-resistance of 50mΩ (max) and a gate-source voltage of 8V. Packaged in a TO-236-3 surface-mount configuration, this device operates from -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching times with a turn-on delay of 15ns and a fall time of 35ns.
PackageTO-236-3
Voltage12V
Current3A
MountingSurface Mount
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Technical Specifications
Vishay SI2315BDS-T1-E3 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
3A
Current
3A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
50mR
Dual Supply Voltage
-12V
Fall Time
35ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
715pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-900mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
No
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-900mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
15ns
Voltage
12V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2315BDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2315BDS-T1-E3 to view detailed technical specifications.
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