The SI2315DS-T1 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.5A and a drain to source breakdown voltage of -12V. The device is packaged in a SOT-23-3 package and has a maximum power dissipation of 1.25W. The MOSFET has a fall time of 15ns and a turn-off delay time of 50ns, with a turn-on delay time of 13ns. It is not RoHS compliant.
PackageSOT-23-3
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2315DS-T1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI2 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI2315DS-T1 Datasheet
Download the complete datasheet for Vishay SI2315DS-T1 to view detailed technical specifications.
No datasheet is available for this part.
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