N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features a continuous drain current of 5.6A and a drain-to-source voltage of 40V. Offers a low drain-source on-resistance of 35mR (max 42mR) and a nominal gate-source voltage of 1.2V. Packaged in a SOT-23 surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 2.1W. RoHS compliant and halogen-free.
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Vishay SI2318CDS-T1-GE3 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 42mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 340pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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