P-channel MOSFET, designed for general-purpose small signal applications. Features a -40V Drain-to-Source Voltage (Vdss) and a continuous drain current of -4.4A. Offers a low Drain-Source On-Resistance (Rds On) of 77mR maximum. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a compact SOT-23 surface-mount case, this component is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
Quick Jump:
Technical Specifications
Vishay SI2319CDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -4.4A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 77mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 595pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2319CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2319CDS-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
