P-channel MOSFET, designed for general-purpose small signal applications. Features a -40V Drain-to-Source Voltage (Vdss) and a continuous drain current of -4.4A. Offers a low Drain-Source On-Resistance (Rds On) of 77mR maximum. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a compact SOT-23 surface-mount case, this component is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Vishay SI2319CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
-4.4A
Drain to Source Resistance
64mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
77mR
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
595pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
77mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.2V
Turn-Off Delay Time
20ns
Turn-On Delay Time
40ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2319CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2319CDS-T1-GE3 to view detailed technical specifications.
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