P-channel MOSFET, general purpose small signal transistor in a SOT-23-3 surface mount package. Features a continuous drain current of 3.7A, drain-source voltage of -20V, and a maximum drain-source on-resistance of 39mR. Operates with a gate-source voltage of 8V and a threshold voltage of -1V. Offers fast switching with turn-on delay time of 25ns and fall time of 43ns. This component is RoHS compliant and designed for operation between -55°C and 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2323DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.7A
Drain to Source Resistance
39mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
39mR
Fall Time
43ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
1.02nF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
39mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
71ns
Turn-On Delay Time
25ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2323DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2323DS-T1-GE3 to view detailed technical specifications.
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