N-Channel TrenchFET® MOSFET, surface mountable in a TO-236 package. Features 100V drain-source breakdown voltage and 1.15A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 730mW. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 11ns. RoHS compliant and lead-free.
PackageTO-236
MountingSurface Mount
PolarityN-CHANNEL
Power730mW
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Technical Specifications
Vishay SI2328DS-T1-E3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
1.15A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
250mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
730mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
730mW
Radiation Hardening
No
Rds On Max
250mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
9ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2328DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2328DS-T1-E3 to view detailed technical specifications.
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