N-Channel MOSFET, 100V Drain-Source Voltage, 1.15A Continuous Drain Current. Features 250mΩ Max Drain-Source On-Resistance, 4V Threshold Voltage, and 730mW Max Power Dissipation. Packaged in a SOT-23-3 surface-mount case, this component offers fast switching with 7ns turn-on and 9ns turn-off delay times. Operating temperature range is -55°C to 150°C.
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Vishay SI2328DS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.15A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
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