N-Channel MOSFET, 100V Drain-Source Voltage, 1.15A Continuous Drain Current. Features 250mΩ Max Drain-Source On-Resistance, 4V Threshold Voltage, and 730mW Max Power Dissipation. Packaged in a SOT-23-3 surface-mount case, this component offers fast switching with 7ns turn-on and 9ns turn-off delay times. Operating temperature range is -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2328DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.15A
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
100V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
730mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
250mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
9ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2328DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2328DS-T1-GE3 to view detailed technical specifications.
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