P-channel MOSFET, TO-236 package, offering a continuous drain current of 4.1A and a drain-source breakdown voltage of -12V. Features a low drain-source on-resistance of 32mΩ, ideal for general-purpose small signal applications. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 45ns. RoHS compliant and surface mountable.
PackageTO-236
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2333DS-T1-E3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
4.1A
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
32mR
Fall Time
45ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
32mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2333DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2333DS-T1-E3 to view detailed technical specifications.
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