P-channel, small-signal MOSFET for general-purpose applications. Features a -80V drain-source voltage (Vdss) and 1.2A continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 270mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a SOT-23-3 surface-mount case, this RoHS-compliant component is supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI2337DS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.2A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
-80V
Drain-source On Resistance-Max
270mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
500pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2337DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2337DS-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.