P-channel, small-signal MOSFET for general-purpose applications. Features a -80V drain-source voltage (Vdss) and 1.2A continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 270mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a SOT-23-3 surface-mount case, this RoHS-compliant component is supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI2337DS-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 270mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI2337DS-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
