P-channel MOSFET, 30V Drain-Source Voltage (Vdss), 2.5A Continuous Drain Current (ID), and 72mR Drain-Source Resistance (Rds On Max). This surface mount component features a SOT-23-3 package with dimensions of 3.04mm length, 1.4mm width, and 1.02mm height. It offers a maximum power dissipation of 710mW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and 20ns fall time.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2341DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 400pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2341DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2341DS-T1-GE3 to view detailed technical specifications.
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