N-channel power MOSFET featuring 8V drain-source voltage and 6A continuous drain current. Offers low 17mΩ drain-to-source resistance for efficient power handling. Designed for surface mounting in a SOT-23 package, this component boasts fast switching characteristics with a 6ns turn-on delay and 25ns fall time. Maximum power dissipation is 2.5W, with operation from -55°C to 150°C. Halogen-free and RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2342DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 4.5V |
| Input Capacitance | 1.07nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.000282oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2342DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2342DS-T1-GE3 to view detailed technical specifications.
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