P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 3.1A and a drain-source voltage of -30V. Offers a low drain-source on-resistance (Rds On) of 53mR. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2343DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
53mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
53mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
31ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2343DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2343DS-T1-GE3 to view detailed technical specifications.
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