P-Channel MOSFET, SOT-23-3 package, featuring 30V drain-source breakdown voltage and 42mΩ maximum drain-source on-resistance. This surface mount device offers a continuous drain current of 5A and a maximum power dissipation of 1.7W. Key switching characteristics include a 9ns fall time and 19ns turn-off delay time, with an input capacitance of 705pF. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.7W
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Technical Specifications
Vishay Si2347DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
68mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
705pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
42mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.5V
Turn-Off Delay Time
19ns
Compliance
RoHS
Compliant
Datasheet
Vishay Si2347DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si2347DS-T1-GE3 to view detailed technical specifications.
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