P-Channel MOSFET, SOT-23-3 package, featuring 30V drain-source breakdown voltage and 42mΩ maximum drain-source on-resistance. This surface mount device offers a continuous drain current of 5A and a maximum power dissipation of 1.7W. Key switching characteristics include a 9ns fall time and 19ns turn-off delay time, with an input capacitance of 705pF. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
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Vishay Si2347DS-T1-GE3 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 705pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 19ns |
| RoHS | Compliant |
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