The SI2392DS-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 3.1A. The device features a drain to source breakdown voltage of 100V and a drain to source resistance of 135mR. The gate to source voltage is 3V and the input capacitance is 196pF. The MOSFET is RoHS compliant and packaged in a SOT-23 package.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI2392DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 3V |
| Input Capacitance | 196pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 126mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2392DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2392DS-T1-GE3 to view detailed technical specifications.
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